Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN gan Yusuke Sakai, S. Lawrence Selvaraj, Osamu Oda, Takashi Egawa

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Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition gan Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori

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Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition gan Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori

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Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) gan Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, Masaru Hori

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Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources gan Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Takahiro Kimura, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Osamu Oda, Masaru Hori

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