Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering by Othman, Nurul Aida Farhana, Hatta, Sharifah Fatmadiana Wan Muhamad, Soin, Norhayati

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions by Othman, Nurul Aida Farhana, Rahman, Sharidya, Wan Muhamad Hatta, Sharifah Fatmadiana, Soin, Norhayati, Benbakhti, Brahim, Duffy, Steven