SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM за авторством Wilshaw, P, Ourmazd, A, Booker, G

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC за авторством Ourmazd, A, Wilshaw, P, Cripps, R

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. за авторством Ourmazd, A, Wilshaw, P, Booker, G

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. за авторством Ourmazd, A, Wilshaw, P, Booker, G

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON за авторством Ourmazd, A, Wilshaw, P, Booker, G

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON за авторством Ourmazd, A, Wilshaw, P, Booker, G

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM. за авторством Wilshaw, P, Ourmazd, A, Booker, G

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS. за авторством Ourmazd, A, Wilshaw, P, Weber, E, Gottschalk, H, Booker, G, Alexander, H

Achieving accurate estimates of fetal gestational age and personalised predictions of fetal growth based on data from an international prospective cohort study: a population-based... за авторством Fung, R, Villar, J, Dashti, A, Cheikh Ismail, L, Staines-Urias, E, Ohuma, EO, Salomon, LJ, Victora, CG, Barros, FC, Lambert, A, Carvalho, M, Jaffer, YA, Noble, AJ, Gravett, MG, Purwar, M, Pang, R, Bertino, E, Munim, S, Myat Min, A, McGready, R, Norris, SA, Bhutta, ZA, Kennedy, SH, Papageorghiou, AT, Ourmazd, A, International Fetal and Newborn Gro Group

Achieving accurate estimates of fetal gestational age and personalised predictions of fetal growth based on data from an international prospective cohort study: a population-based... за авторством Fung, R, Villar, J, Dashti, A, Ismail, LC, Staines-Urias, E, Ohuma, EO, Salomon, LJ, Victora, CG, Barros, FC, Lambert, A, Carvalho, M, Jaffer, YA, Noble, JA, Gravett, MG, Purwar, M, Pang, R, Bertino, E, Munim, S, Min, AM, McGready, R, Norris, SA, Bhutta, ZA, Kennedy, SH, Papageorghiou, AT, Ourmazd, A, Norris, S, Abbott, SE, Abubakar, A, Acedo, J, Ahmed, I, Al-Aamri, F, Al-Abduwani, J, Al-Abri, J, Alam, D, Albernaz, E, Algren, H, Al-Habsi, F, Alija, M, Al-Jabri, H, Al-Lawatiya, H, Al-Rashidiya, B, Altman, DG, Al-Zadjali, WK, Andersen, HF, Aranzeta, L, Baricco, M, Barros, FC, Barsosio, H, Batiuk, C, Ash, S

An SEM EBIC study of the electronic properties of dislocations in silicon за авторством Wilshaw, P, Wilshaw, Peter

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