SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM 由 Wilshaw, P, Ourmazd, A, Booker, G

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC 由 Ourmazd, A, Wilshaw, P, Cripps, R

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. 由 Ourmazd, A, Wilshaw, P, Booker, G

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. 由 Ourmazd, A, Wilshaw, P, Booker, G

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON 由 Ourmazd, A, Wilshaw, P, Booker, G

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON 由 Ourmazd, A, Wilshaw, P, Booker, G

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM. 由 Wilshaw, P, Ourmazd, A, Booker, G

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS. 由 Ourmazd, A, Wilshaw, P, Weber, E, Gottschalk, H, Booker, G, Alexander, H

Achieving accurate estimates of fetal gestational age and personalised predictions of fetal growth based on data from an international prospective cohort study: a population-based... 由 Fung, R, Villar, J, Dashti, A, Cheikh Ismail, L, Staines-Urias, E, Ohuma, EO, Salomon, LJ, Victora, CG, Barros, FC, Lambert, A, Carvalho, M, Jaffer, YA, Noble, AJ, Gravett, MG, Purwar, M, Pang, R, Bertino, E, Munim, S, Myat Min, A, McGready, R, Norris, SA, Bhutta, ZA, Kennedy, SH, Papageorghiou, AT, Ourmazd, A, International Fetal and Newborn Gro Group

Achieving accurate estimates of fetal gestational age and personalised predictions of fetal growth based on data from an international prospective cohort study: a population-based... 由 Fung, R, Villar, J, Dashti, A, Ismail, LC, Staines-Urias, E, Ohuma, EO, Salomon, LJ, Victora, CG, Barros, FC, Lambert, A, Carvalho, M, Jaffer, YA, Noble, JA, Gravett, MG, Purwar, M, Pang, R, Bertino, E, Munim, S, Min, AM, McGready, R, Norris, SA, Bhutta, ZA, Kennedy, SH, Papageorghiou, AT, Ourmazd, A, Norris, S, Abbott, SE, Abubakar, A, Acedo, J, Ahmed, I, Al-Aamri, F, Al-Abduwani, J, Al-Abri, J, Alam, D, Albernaz, E, Algren, H, Al-Habsi, F, Alija, M, Al-Jabri, H, Al-Lawatiya, H, Al-Rashidiya, B, Altman, DG, Al-Zadjali, WK, Andersen, HF, Aranzeta, L, Baricco, M, Barros, FC, Barsosio, H, Batiuk, C, Ash, S

An SEM EBIC study of the electronic properties of dislocations in silicon 由 Wilshaw, P, Wilshaw, Peter

其他作者: “...Ourmazd, A...”