Showing 1 - 1 results of 1 for search 'P. Fernandes Paes Pinto Rocha', query time: 0.02s Refine Results
  1. 1
    Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT

    Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT by P. Fernandes Paes Pinto Rocha, L. Vauche, B. Mohamad, W. Vandendaele, E. Martinez, M. Veillerot, T. Spelta, N. Rochat, R. Gwoziecki, B. Salem, V. Sousa

    Published 2023-03-01
    Get full text
    Article

Search Tools: