Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz) by A. P. Dolgolenko, G. P. Gaidar, P. G. Litovchenko

Get full text

Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

Get full text

Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

Get full text

Radiation hardness of silicon doped by germanium with high concentration of free oxygen by M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko

Get full text

Long-range effect in condensed matter and its revealing in implanted with high energy light ions silicon by A. A. Groza, P. G. Litovchenko, M. I. Starchik, V. I. Khivrych, G. G. Shmatko, V. I. Varnina

Get full text

Influence of the germanium and oxygen impurities on the radiation stability of the silicon by A. A. Groza, V. I. Varnina, P. G. Litovchenko, L. S. Marchenko, M. I. Starchik, L. I. Barabash, S. V. Berdnichenko

Get full text

Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons by R.M. Vernydub, O.I. Kyrylenko, O.V. Konoreva, Ya.M. Olikh, P.G. Litovchenko, Yu.V. Pavlovskyy, P. Potera, V.P. Tartachnyk

Get full text

Possibilities of increase of radiation firmness of semiconductor materials by P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik

Get full text