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    Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance

    Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance by L. Zhang, T. Dai, P.M. Gammon, V.A. Shah, P.A. Mawby, M. Antoniou

    Published 2023-03-01
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