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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers by Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, Rémi Beneyton, Pablo Acosta Alba, Sébastien Kerdilès, Filadelfo Cristiano
Published 2018-07-01
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