Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy by Alexander Karg, Alexander Hinz, Stephan Figge, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, Martin Eickhoff

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Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy by Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt

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Various atomic structures of monolayer silicene fabricated on Ag(111) by Zhi-Long Liu, Mei-Xiao Wang, Jin-Peng Xu, Jian-Feng Ge, Guy Le Lay, Patrick Vogt, Dong Qian, Chun-Lei Gao, Canhua Liu, Jin-Feng Jia

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Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] by Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

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Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy by Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

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Adsorption-controlled growth of homoepitaxial c-plane sapphire films by Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti, Johan Eckl-Haese, Jochen Mannhart, Takeyoshi Onuma, Ksenia S. Rabinovich, Darrell G. Schlom, Sander Smink, Ulrich Starke, Jacob Steele, Patrick Vogt, Hongguang Wang, Felix V. E. Hensling

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Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy by Felix V.E. Hensling, Patrick Vogt, Jisung Park, Shun‐Li Shang, Huacheng Ye, Yu‐Mi Wu, Kathleen Smith, Veronica Show, Kathy Azizie, Hanjong Paik, Debdeep Jena, Huili G. Xing, Y. Eren Suyolcu, Peter A. van Aken, Suman Datta, Zi‐Kui Liu, Darrell G. Schlom

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy by Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

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