Study of stress in advanced interconnect systems (nano CMOS device and process technology) by Pey, Kin Leong.

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Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines by Pey, Kin Leong, Lee, Pooi See, Mangelinck, D.

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Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate by Li, Y. S., Lee, Pooi See, Pey, Kin Leong

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Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry by Pey, Kin Leong, Lee, Pooi See, Mangelinck, D., Osipowitcz, T.

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Characterization of the junction leakage of Ti-capped Ni-silicided junctions by Lee, Pooi See, Pey, Kin Leong, Toledo, N. G.

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Dielectric breakdown - recovery in logic and resistive switching in memory : bridging the gap between the two phenomena by Pey, Kin Leong, Raghavan, Nagarajan, Wu, Xing, Liu, Wenhu, Bosman, Michel

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Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs by Liu, Wenhu, Padovani, Andrea, Larcher, Luca, Raghavan, Nagarajan, Pey, Kin Leong

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Effect of Ti alloying in nickel silicide formation by Setiawan, Y., Tan, C. W., Lee, Pooi See, Pey, Kin Leong

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Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching by Raghavan, Nagarajan, Pey, Kin Leong, Wu, Xing, Liu, Wenhu, Bosman, Michel

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Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees by Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong

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Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates by Setiawan, Y., Lee, Pooi See, Balakumar, S., Pey, Kin Leong, Wang, X. C.

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Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate by Setiawan, Y., Balakumar, S., Tan, Eu Jin, Pey, Kin Leong, Lee, Pooi See

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On the morphological changes of Ni- and Ni(Pt)-silicides by Mangelinck, D., Osipowicz, T., Lee, Pooi See, Pey, Kin Leong, Chi, Dong Zhi

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Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications by Liu, W. H., Pey, Kin Leong, Raghavan, Nagarajan, Wu, X., Bosman, Michel

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In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C by Mangelinck, D., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun

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Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes by Mangelinck, D., Lahiri, S. K., Chi, Dong Zhi, Lee, Pooi See, Pey, Kin Leong

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Layer inversion of Ni(Pt)Si on mixed phase Si films by Osipowicz, T., See, A., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun

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Effects of Applied Loads, Effective Contact Area and Surface Roughness on the Dicing Yield of 3D Cu Bonded Interconnects by Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Thompson, Carl V., Li, Hongyu

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Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate by Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A.

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Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes by Susantyoko, Rahmat Agung, Wang, Xinghui, Sun, Leimeng, Pey, Kin Leong, Fitzgerald, Eugene, Zhang, Qing

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