Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities by Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Sáenz de Santa María Modroño, Danxuan Chen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean

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