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    Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

    Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits by Tung-Ying Hsieh, Ping-Yi Hsieh, Chih-Chao Yang, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Meng-Chyi Wu

    Published 2020-07-01
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