Showing 1 - 11 results of 11 for search 'Pirouz, P', query time: 0.02s
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1
DISLOCATION MECHANISMS FOR TWINNING AND POLYTYPIC TRANSFORMATIONS IN SEMICONDUCTORS by Pirouz, P
Published 1989Conference item -
2
MICRO-INDENTATION INVESTIGATION OF DOPING EFFECTS ON THE FRACTURE BEHAVIOR OF GERMANIUM. by Roberts, S, Pirouz, P
Published 1986Journal article -
3
DOPING EFFECTS ON INDENTATION PLASTICITY AND FRACTURE IN GERMANIUM by Roberts, S, Pirouz, P, Hirsch, P
Published 1985Journal article -
4
SIMULTANEOUS OBSERVATION OF ALPHA-DISLOCATION AND BETA-DISLOCATION MOVEMENT AND THEIR EFFECT ON THE FRACTURE-BEHAVIOR OF GAAS by Warren, P, Pirouz, P, Roberts, S
Published 1984Journal article -
5
A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION-MOTION IN SILICON by Roberts, S, Pirouz, P, Hirsch, P
Published 1983Journal article -
6
SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON. by Roberts, S, Pirouz, P, Hirsch, P
Published 1983Journal article -
7
EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS. by Hirsch, P, Pirouz, P, Roberts, S, Warren, P
Published 1986Journal article -
8
INDENTATION PLASTICITY AND POLARITY OF HARDNESS ON (111) FACES OF GAAS by Hirsch, P, Pirouz, P, Roberts, S, Warren, P
Published 1985Journal article -
9
TEM INVESTIGATION OF THE PLASTIC ZONE, DISLOCATION ROSETTES AND CRACKS AROUND VICKERS INDENTATIONS IN SILICON. by Samuels, J, Pirouz, P, Roberts, S, Warren, P, Hirsch, P
Published 1985Journal article -
10
DISSOCIATION OF DISLOCATIONS IN DIAMOND by Pirouz, P, Cockayne, D, Sumida, N, Hirsch, P, Lang, A
Published 1983Journal article -
11
A QUANTITATIVE-ANALYSIS OF IMAGE-CONTRAST FROM EXTRINSIC STACKING-FAULTS by Cockayne, D, Pirouz, P, Liu, Z, Anstis, G, Karnthaler, P
Published 1984Journal article