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    A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage

    A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage by Jyi-Tsong Lin, Wei-Han Lee, Po-Hsieh Lin, Steve W. Haga, Yun-Ru Chen, Abhinav Kranti

    Published 2017-01-01
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