Design and analysis of 2-μm InGaSb/GaSb quantum well lasers integrated onto silicon-on-insulator (SOI) waveguide circuits through an Al2O3 bonding layer de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang

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Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang

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High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers de réir Qiao, Zhongliang, Li, Xiang, Wang, Hong, Li, Te, Gao, Xin, Qu, Yi, Bo, Baoxue, Liu, Chongyang

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Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing de réir Qiao, Zhongliang, Tang, Xiaohong, Li, Xiang, Bo, Baoxue, Gao, Xin, Qu, Yi, Liu, Chongyang, Wang, Hong

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Optical frequency comb generation from a 1.65 µm single-section quantum well laser de réir Li, Xiang, Sia, Brian Jia Xu, Wang, Jiawei, Qiao, Zhongliang, Wang, Wanjun, Guo, Xin, Wang, Hong, Liu, Chongyang

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Optoelectronic oscillator based on a silicon microring modulator de réir Li, Xiang, Sia, Brian Jia Xu, Wang, Jiawei, Qiao, Zhongliang, Wang, Wanjun, Guo, Xin, Wang, Hong, Liu, Chongyang

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Temperature- and current-dependent spontaneous emission study on 2 μm InGaSb/AlGaAsSb quantum well lasers de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Liao, Yongping, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μm de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Sia, Brian Jia Xu, Wang, Wanjun, Guo, Xin, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband de réir Sia, Brian Jia Xu, Li, Xiang, Qiao, Zhongliang, Guo, Xin, Zhou, Jin, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Wang, Wanjun, Wang, Hong

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Sub-kHz linewidth, hybrid III-V/silicon wavelength-tunable laser diode operating at the application-rich 1647-1690 nm de réir Sia, Brian Jia Xu, Li, Xiang, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Zhou, Jin, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Wang, Hong

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Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Zhang, Yu, Xu, Yingqiang, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang

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Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm de réir Sia, Brian Jia Xu, Wang, Wanjun, Qiao, Zhongliang, Li, Xiang, Guo, Tina Xin, Zhou, Jin, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Wang, Hong

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High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband de réir Wang, Jiawei, Sia, Brian Jia Xu, Li, Xiang, Guo, Xin, Wang, Wanjun, Qiao, Zhongliang, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Rusli, Wang, Hong

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Stable mode-locked operation with high temperature characteristics of a two-section InGaAs/GaAs double quantum wells laser de réir Qiao, Zhongliang, Li, Xiang, Sia, Jia Xubrian, Wang, Wanjun, Wang, Hong, Li, Lin, Li, Zaijin, Zhao, Zhibin, Qu, Yi, Gao, Xin, Bo, Baoxue, Liu, Chongyang

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Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm de réir Sia, Brian Jia Xu, Wang, Wanjun, Qiao, Zhongliang, Li, Xiang, Guo, Xin, Zhou, Jin, Littlejohns, Callum G., Zhang, Zecen, Liu, Chongyang, Reed, Graham T., Wang, Hong

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Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration de réir Li, Xiang, Sia, Brian Jia Xu, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Wang, Hong, Liu, Chongyang

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High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser de réir Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang, Sia, Brian Jia Xu

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Compact, hybrid III-V/silicon Vernier laser diode operating from 1955-1992 nm de réir Sia, Brian Jia Xu, Li, Xiang, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Wang, Jiawei, Littlejohns, Callum George, Liu, Chongyang, Reed, Graham T., Ang, Kian Siong, Wang, Hong

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