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    4H-SiC wafers studied by X-ray absorption and Raman scattering

    4H-SiC wafers studied by X-ray absorption and Raman scattering por Mendis, Suwan P., Xu, Qiang, Sun, Hua Yang, Chen, Cheng, Jang, Ling-Yun, E. Rusli, Tin, Chin Che, Qiu, Zhi Ren, Wu, Zhengyun, Liu, Chee Wee, Feng, Zhe Chuan

    Publicado 2013
    Enlace del recurso
    Enlace del recurso
    Conference Paper

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