Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters by Michael Basler, Stefan Mönch, Richard Reiner, Fouad Benkhelifa, Rüdiger Quay

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GaN Active Rectifier Diode by Michael Basler, Richard Reiner, Stefan Moench, Patrick Waltereit, Rudiger Quay

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Monolithically Integrated GaN Gate Drivers– A Design Guide by Michael Basler, Niklas Deneke, Stefan Monch, Richard Reiner, Bernhard Wicht, Rudiger Quay

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Three-Phase Motor Inverter and Current Sensing GaN Power IC by Stefan Mönch, Richard Reiner, Michael Basler, Daniel Grieshaber, Fouad Benkhelifa, Patrick Waltereit, Rüdiger Quay

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Building Blocks for GaN Power Integration by Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Doring, Patrick Waltereit, Rudiger Quay, Oliver Ambacher

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Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)] by Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla

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3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond by Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla

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GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI by Stefan Mönch, Michael Basler, Richard Reiner, Fouad Benkhelifa, Philipp Döring, Matthias Sinnwell, Stefan Müller, Michael Mikulla, Patrick Waltereit, Rüdiger Quay

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