Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications by K. J. P. Jacobs, B. J. Stevens, R. Baba, O. Wada, T. Mukai, R. A. Hogg

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Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes by D. Childs, K.M. Groom, S.K. Ray, H.Y. Liu, M. Hopkinson, R.A. Hogg

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Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes by D. Childs, K.M. Groom, S.K. Ray, H.Y. Liu, M. Hopkinson, R.A. Hogg

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Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices by M. A. Majid, M. Hugues, S. Vézian, D. T. D. Childs, R. A. Hogg

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Erratum: “Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes” [AIP Adv. 11, 065315 (2021)] by Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T. D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J. E. Taylor, R. A. Hogg

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Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes by Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T. D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J. E. Taylor, R. A. Hogg

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