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Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques by S. David, J. Roque, N. Rochat, N. Bernier, L. Piot, R. Alcotte, T. Cerba, M. Martin, J. Moeyaert, Y. Bogumilowizc, S. Arnaud, F. Bertin, F. Bassani, T. Baron
Published 2016-05-01
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Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility by R. Alcotte, M. Martin, J. Moeyaert, R. Cipro, S. David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sanchez, Z. Ye, X. Y. Bao, J. B. Pin, T. Baron
Published 2016-04-01
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