Investigation of composition and origin of the intermediate layers at the Ga2O3/AlN and Ga2O3/Al2O3 interfaces by Schowalter Marco, Raghuvansy S., Karg A., Vogt P., Schlom D., Jena D., Eickhoff M., Rosenauer A.

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Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy by Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt

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Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface by M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff

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Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] by Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

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Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy by Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

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