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    Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance

    Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance od Pranita Soni, Aditya Jain, Kaushal Kumar, Lokesh Kumar Soni, Ajay Kumar, Neha Gupta, Amit Kumar Goyal, Rakesh Saroha

    Wydane 2025-03-01
    Dokumenty pełnotekstowe
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