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    Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature

    Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature af Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri V. Rao

    Udgivet 2021-01-01
    Få fuldtekst
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