Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies by Gouker, Pascale M., Gadlage, Matthew J., Ahlbin, Jonathan R., Ramachandra, Vishwanath, Dinkin, Cody A., Bhuva, Bharat L., Narasimham, Balaji, Schrimpf, Ronald D., McCurdy, Michael W., Alles, Michael L., Reed, Robert A., Mendenhall, Marcus H., Massengill, Lloyd W., Shuler, Robert L., McMorrow, Dale

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Scaling Effects on Single-Event Transients in InGaAs FinFETs by Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, del Alamo, Jesus A

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The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs) by Arutt, Charles N, Alles, Michael L, Liao, Wenjun, Gong, Huiqi, Davidson, Jim L, Schrimpf, Ronald D, Reed, Robert A, Weller, Robert A, Bolotin, Kirill, Nicholl, Ryan, Pham, Thang Toan, Zettl, Alex, Li, Mo, Alphenaar, Bruce W, Lin, Ji-Tzuoh, Shurva, Pranoy Deb, McNamara, Shamus, Walsh, Kevin M, Feng, Philip X-L, Hutin, Louis, Ernst, Thomas, Homeijer, Brian D, Polcawich, Ronald G, Proie, Robert M, Jones, Jacob L, Glaser, Evan R, Cress, Cory D, Bassiri-Gharb, Nazanin, Du, Qingyang, Hu, Juejun

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