Showing 1 - 3 results of 3 for search 'René Escoffier', query time: 0.02s Refine Results
  1. 1
    Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

    Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors by Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley

    Published 2023-03-01
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  2. 2
    Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics

    Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

    Published 2025-01-01
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  3. 3
    Analytic Model of Threshold Voltage (V<sub>TH</sub>) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress

    Analytic Model of Threshold Voltage (V<sub>TH</sub>) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress by René Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica, Ferdinando Iucolano

    Published 2022-01-01
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