Determination of bandgap states in p-type In[subscript 0.49]Ga[subscript 0.51]P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy by Gonzalez, Maria, Carlin, A. M., Dohrman, C. L., Ringel, S. A., Fitzgerald, Eugene A.

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Correlation of a generation-recombination center with a deep level trap in GaN by Nguyen, X. S., Lin, K., Zhang, Z., McSkimming, B., Arehart, A. R., Speck, J. S., Ringel, S. A., Fitzgerald, Eugene A., Chua, S. J.

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1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge by Yoon, Soon Fatt, Chen, Kah Pin, Ng, Tien Khee, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Lew, Kim Luong, Pitera, Arthur J., Ringel, Steve A., Carlin, Andrew M., Gonzalez, Maria, Fitzgerald, Eugene A

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High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells by Altermatt, Pietro P., Xiong, Zhen, He, QuiXiang, Deng, WeiWei, Ye, Feng, Yang, Yang, Chen, Yifeng, Feng, ZhiQiang, Verlinden, Pierre J., Liu, Anyao, Macdonald, Daniel H., Luka, Tabea, Lausch, Dominik, Turek, Marko, Hagendorf, Christian, Wagner-Mohnsen, Hannes, Schon, Jonas, Kwapil, Wolfram, Fruhauf, Felix, Breitenstein, Otwin, Looney, Erin Elizabeth, Buonassisi, Anthony, Needleman, David Berney, Jackson, Christine M., Arehart, Aaron R., Ringel, Steven A., McIntosh, Keith R., Abbott, Malcolm D., Sudbury, Ben A., Zuschlas, Annika, Winter, Clemens, Skorka, Daniel, Hahn, Giso, Chung, Daniel, Mitchell, Bernhard, Geelan-Small, Peter, Trupke, Thorsten

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