Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study by Angelica Azcatl, Qingxiao Wang, Moon J. Kim, Robert M. Wallace

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Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics by Santosh KC, Roberto C. Longo, Robert M. Wallace, Kyeongjae Cho

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A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides by Yifan Nie, Chaoping Liang, Pil-Ryung Cha, Luigi Colombo, Robert M. Wallace, Kyeongjae Cho

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Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2 by Ava Khosravi, Rafik Addou, Christopher M. Smyth, Ruoyu Yue, Christopher R. Cormier, Jiyoung Kim, Christopher L. Hinkle, Robert M. Wallace

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Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation by Zhong Lin, Yu Lei, Shruti Subramanian, Natalie Briggs, Yuanxi Wang, Chun-Li Lo, Eilam Yalon, David Lloyd, Sanfeng Wu, Kristie Koski, Richard Clark, Saptarshi Das, Robert M. Wallace, Thomas Kuech, Joseph Scott Bunch, Xiaoqin Li, Zhihong Chen, Eric Pop, Vincent H. Crespi, Joshua A. Robinson, Mauricio Terrones

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