Analytic Model of Threshold Voltage (V_TH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress by René Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica, Ferdinando Iucolano

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SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications by Salvatore Tudisco, Francesco La Via, Clementina Agodi, Carmen Altana, Giacomo Borghi, Maurizio Boscardin, Giancarlo Bussolino, Lucia Calcagno, Massimo Camarda, Francesco Cappuzzello, Diana Carbone, Salvatore Cascino, Giovanni Casini, Manuela Cavallaro, Caterina Ciampi, Giuseppe Cirrone, Giacomo Cuttone, Alberto Fazzi, Dario Giove, Giuseppe Gorini, Luca Labate, Gaetano Lanzalone, Grazia Litrico, Giuseppe Longo, Domenico Lo Presti, Marco Mauceri, Roberto Modica, Maurizio Moschetti, Annamaria Muoio, Franco Musumeci, Gabriele Pasquali, Giada Petringa, Nicolò Piluso, Giacomo Poggi, Stefania Privitera, Sebastiana Puglia, Valeria Puglisi, Marica Rebai, Sabina Ronchin, Antonello Santangelo, Andrea Stefanini, Antonio Trifirò, Massimo Zimbone

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