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    Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide

    Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide by Alexander A. Lebedev, Vitali V. Kozlovski, Klavdia S. Davydovskaya, Roman A. Kuzmin, Mikhail E. Levinshtein, Anatolii M. Strel’chuk

    Published 2022-12-01
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