Showing 1 - 20 results of 23 for search 'S. J. Pearton', query time: 0.05s Refine Results
  1. 1
    Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

    Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors by Stephen J. Pearton, Fan Ren

    Published 2013-01-01
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  2. 2
    Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

    Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit by Jiancheng Yang, F. Ren, Marko Tadjer, S. J. Pearton, A. Kuramata

    Published 2018-05-01
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  3. 3
    Annealing Stability of NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Heterojunction Rectifiers

    Annealing Stability of NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Heterojunction Rectifiers by Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton

    Published 2023-07-01
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  4. 4
    The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers

    The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers by Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton

    Published 2023-07-01
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  5. 5
    The role of annealing ambient on diffusion of implanted Si in β-Ga2O3

    The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 by Ribhu Sharma, Mark E. Law, Chaker Fares, Marko Tadjer, Fan Ren, A. Kuramata, S. J. Pearton

    Published 2019-08-01
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  6. 6
    Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

    Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74 by Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S. J. Pearton

    Published 2019-07-01
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  7. 7
    Electron injection-induced effects in Si-doped β-Ga2O3

    Electron injection-induced effects in Si-doped β-Ga2O3 by Sushrut Modak, Jonathan Lee, Leonid Chernyak, Jiancheng Yang, Fan Ren, Stephen J. Pearton, Sergey Khodorov, Igor Lubomirsky

    Published 2019-01-01
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  8. 8
    15 MeV proton damage in NiO/β-Ga2O3 vertical rectifiers

    15 MeV proton damage in NiO/β-Ga2O3 vertical rectifiers by Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Jihyun Kim, Fan Ren, S J Pearton

    Published 2023-01-01
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  9. 9
    NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers of 7 kV and 1 mm<sup>2</sup> with 5.5 A Forward Conduction Current

    NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers of 7 kV and 1 mm<sup>2</sup> with 5.5 A Forward Conduction Current by Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim, Stephen J. Pearton

    Published 2023-11-01
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  10. 10
    Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au by Patrick H. Carey IV, Jiancheng Yang, F. Ren, David C. Hays, S. J. Pearton, Soohwan Jang, Akito Kuramata, Ivan I. Kravchenko

    Published 2017-09-01
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  11. 11
    Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3

    Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3 by Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

    Published 2021-12-01
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  12. 12
    Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga<sub>2</sub>O<sub>3</sub> p–n Heterojunction

    Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga<sub>2</sub>O<sub>3</sub> p–n Heterojunction by Alfons Schulte, Sushrut Modak, Yander Landa, Atman Atman, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Leonid Chernyak

    Published 2023-12-01
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  13. 13
    Electrical and Recombination Properties of Polar Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> Films Prepared by Halide Vapor Phase Epitaxy

    Electrical and Recombination Properties of Polar Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> Films Prepared by Halide Vapor Phase Epitaxy by Eugene B. Yakimov, Alexander Y. Polyakov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Mikhail P. Scheglov, Eugene E. Yakimov, Stephen J. Pearton

    Published 2023-03-01
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  14. 14
    Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

    Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si by A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, P. B. Lagov, T. V. Kulevoy

    Published 2018-09-01
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  15. 15
    Reproducible NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers with Breakdown Voltage >8 kV

    Reproducible NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers with Breakdown Voltage >8 kV by Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Xinyi Xia, Timothy Jinsoo Yoo, Honggyu Kim, Fan Ren, Stephen J. Pearton

    Published 2023-05-01
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  16. 16
    Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

    Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors by Stepehn J. Pearton, Jenshan Lin, Cammy R. Abernathy, David P. Norton, Brent P. Gila, Fan Ren, Li- Chia Tien, Hung-Ta Wang, Byoung Sam Kang

    Published 2006-06-01
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  17. 17
    Operation Up to 500 &#x00B0;C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors

    Operation Up to 500 &#x00B0;C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors by Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton

    Published 2019-01-01
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  18. 18
    Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

    Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation by E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton

    Published 2020-11-01
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  19. 19
    Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3

    Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 by Sushrut Modak, Leonid Chernyak, Alfons Schulte, Corinne Sartel, Vincent Sallet, Yves Dumont, Ekaterine Chikoidze, Xinyi Xia, Fan Ren, Stephen J. Pearton, Arie Ruzin, Denis M. Zhigunov, Sergey S. Kosolobov, Vladimir P. Drachev

    Published 2022-03-01
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  20. 20
    Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

    Defects at the surface of β-Ga2O3 produced by Ar plasma exposure by A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton

    Published 2019-06-01
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