High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor by Lu, Bin, Saadat, Omair Irfan, Palacios, Tomas

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Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications by Piner, Edwin L., Chung, Jinwook, Saadat, Omair Irfan, Palacios, Tomas

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Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment by Palacios, Tomas, Lu, Bin, Saadat, Omair Irfan, Piner, Edwin L.

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Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry by Bagnall, Kevin Robert, Saadat, Omair Irfan, Jayanta Joglekar, Sameer, Palacios, Tomas, Wang, Evelyn

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Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method by Sun, X., Chang-Liao, K. S., Cui, S., Ma, T. P., Saadat, Omair Irfan, Palacios, Tomas

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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation by Guo, Shiping, Tirado, Jose M., Gao, Xiang, Saadat, Omair Irfan, Chung, Jae W., Palacios, Tomas

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