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<i>L<sub>g</sub></i> = 50 nm Gate-All-Around In<i><sub>0.53</sub></i>Ga<i><sub>0.47</sub></i>As Nanosheet MOSFETs with Regrown In<i><sub>0.53</sub></i>Ga<i><sub>0.47</sub></i>As Co... by In-Geun Lee, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, Sang-Kuk Kim, Jae-Gyu Kim, Jacob Yun, Ted Kim, Jung-Hee Lee, Chan-Soo Shin, Jae-Hak Lee, Kwang-Seok Seo, Dae-Hyun Kim
Published 2022-08-01
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