Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors حسب Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, Carl Vernette

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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors حسب Gao, Yu, Gan, Chee Lip, Thompson, C. V., Sasangka, W. A.

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Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders حسب Thompson, Carl V., Sasangka, W. A., Gan, Chee Lip, Choi, W. K., Wei, J.

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Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation حسب Sasangka, W. A., Syaranamual, G. J., Gao, Yu, Made, Riko I, Gan, Chee Lip, Thompson, C. V.

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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress حسب Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip

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Characterisation of defects generated during constant current InGaN-on-silicon LED operation حسب Made, Riko I, Gao, Yu, Syaranamual, G. J., Sasangka, W. A., Zhang, Li, Nguyen, Xuan Sang, Tay, Yee Yan, Herrin, Jason Scott, Thompson, C. V., Gan, Chee Lip

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