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Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer by Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongsu Choi, Seungjin Lee, Juyoung Kim, Onejae Sul, Seungbeck Lee, Hyeongtag Jeon
Published 2017-02-01
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