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    In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

    In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal by Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer, Jochen Friedrich

    Published 2020-11-01
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