Showing 1 - 11 results of 11 for search 'Shengdong Hu', query time: 0.03s Refine Results
  1. 1
    SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

    SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss by Shenglong Ran, Zhiyong Huang, Shengdong Hu, Han Yang

    Published 2022-02-01
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  2. 2
    A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

    A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching by Ping Li, Jingwei Guo, Shengdong Hu, Zhi Lin

    Published 2023-06-01
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  3. 3
    A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

    A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance by Yiren Yu, Zijun Cheng, Yi Hu, Ruiyi Lv, Shengdong Hu

    Published 2024-03-01
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  4. 4
    Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

    Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation by Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu

    Published 2023-10-01
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  5. 5
    Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n<sup>−</sup>/n<sup>+</sup>-Buffer Layer

    Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n<sup>−</sup>/n<sup>+</sup>-Buffer Layer by Zhi Lin, Wei Zeng, Da Wang, Ping Li, Shengdong Hu

    Published 2022-12-01
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  6. 6
    TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

    TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode by Ruoyu Wang, Jingwei Guo, Chang Liu, Hao Wu, Zhiyong Huang, Shengdong Hu

    Published 2022-10-01
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  7. 7
    A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances

    A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances by Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu

    Published 2022-03-01
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  8. 8
    Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

    Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure by Yuan Wang, Tao Liu, Lingli Qian, Hao Wu, Yiren Yu, Jingyu Tao, Zijun Cheng, Shengdong Hu

    Published 2023-03-01
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  9. 9
    Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

    Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective by Tao Liu, Yuan Wang, Rongyao Ma, Hao Wu, Jingyu Tao, Yiren Yu, Zijun Cheng, Shengdong Hu

    Published 2023-05-01
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  10. 10
    Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

    Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer by Jingjing Jin, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, Ye Huang

    Published 2015-01-01
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  11. 11
    A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

    A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance by Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu

    Published 2024-05-01
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