Straintronics with van der Waals materials by Feng Miao, Shi-Jun Liang, Bin Cheng

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A Braitenberg Vehicle Based on Memristive Neuromorphic Circuits by Cong Wang, Zaizheng Yang, Shuang Wang, Pengfei Wang, Chen-Yu Wang, Chen Pan, Bin Cheng, Shi-Jun Liang, Feng Miao

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Ultrathick MA2N4(M'N) Intercalated Monolayers with Sublayer‐Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications by Che Chen Tho, Xukun Feng, Liemao Cao, Guangzhao Wang, Shi‐Jun Liang, Chit Siong Lau, San‐Dong Guo, Yee Sin Ang

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Harnessing nonlinear conductive characteristic of TiO2/HfO2 memristor crossbar for implementing parallel vector–matrix multiplication by Wei Wei, Cong Wang, Chen Pan, Xing-Jian Yangdong, Zai-Zheng Yang, Yuekun Yang, Bin Cheng, Shi-Jun Liang, Feng Miao

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Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers by Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang

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Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor by Junlin Xiong, Jiao Xie, Bin Cheng, Yudi Dai, Xinyu Cui, Lizheng Wang, Zenglin Liu, Ji Zhou, Naizhou Wang, Xianghan Xu, Xianhui Chen, Sang-Wook Cheong, Shi-Jun Liang, Feng Miao

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Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure by Yudi Dai, Junlin Xiong, Yanfeng Ge, Bin Cheng, Lizheng Wang, Pengfei Wang, Zenglin Liu, Shengnan Yan, Cuiwei Zhang, Xianghan Xu, Youguo Shi, Sang-Wook Cheong, Cong Xiao, Shengyuan A. Yang, Shi-Jun Liang, Feng Miao

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Cataloguing MoSi2N4 and WSi2N4 van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications by Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee‐Liat Ong, Shi‐Jun Liang, San‐Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang

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