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High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition by Fu Chen, Shichuang Sun, Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Published 2017-12-01
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Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs by Liang Song, Kai Fu, Zhili Zhang, Shichuang Sun, Weiyi Li, Guohao Yu, Ronghui Hao, Yaming Fan, Wenhua Shi, Yong Cai, Baoshun Zhang
Published 2017-12-01
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