Vacuum Transistors Based on III-Nitrides Field Emitter Arrays with Self-Aligned Gate by Shih, Pao-Chuan

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Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors by Shih, Pao-Chuan, Perozek, Joshua, Akinwande, Akintunde I., Palacios, Tomás

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Wet-based digital etching on GaN and AlGaN by Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan, Palacios, Tomás

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Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process by Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I., Palacios, Tomas

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GaN Nanowire Field Emitters with a Self-Aligned Gate Process by Shih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai, Akinwande, Akintunde I., Palacios, Tomas

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Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays by Shih, Pao-Chuan, Rughoobur, Girish, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan, Akinwande, Akintunde I., Palacios, Tomas

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