“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes by Guo-En Chang, Shui-Qing Yu, Greg Sun

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Group IV topological quantum alloy and the role of short-range order: the case of Ge-rich Ge 1–x Pb x by Yunfan Liang, Shunda Chen, Xiaochen Jin, Damien West, Shui-Qing Yu, Tianshu Li, Shengbai Zhang

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Lncrna nonratt021477.2 interference aggravates h2o2-induced oxidative stress in brl cells by Hong JI, Yue HUA, Chun-Wei LIU, Zi-Yi SHAO, Jia-Jun ZHANG, Shui-Qing YU

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High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules by Syam Madhusoodhanan, Abbas Sabbar, Huong Tran, Pengyu Lai, David Gonzalez, Alan Mantooth, Shui-Qing Yu, Zhong Chen

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Design and optimization of high temperature optocouplers as galvanic isolation by Abbas Sabbar, Syam Madhusoodhanan, Huong Tran, Binzhong Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, Zhong Chen

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Toward Single Atom Chains with Exfoliated Tellurium by Hugh O. H. Churchill, Gregory J. Salamo, Shui-Qing Yu, Takayuki Hironaka, Xian Hu, Jeb Stacy, Ishiang Shih

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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission by Grey Abernathy, Solomon Ojo, Abdulla Said, Joshua M. Grant, Yiyin Zhou, Hryhorii Stanchu, Wei Du, Baohua Li, Shui-Qing Yu

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Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications by Pengyu Lai, David Gonzalez, Syam Madhusoodhanan, Abbas Sabbar, Salahaldein Ahmed, Binzhong Dong, Jiangbo Wang, H. Alan Mantooth, Shui-Qing Yu, Zhong Chen

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Impact of Long-Term Annealing on Photoluminescence from Ge_1−xSn_x Alloys by Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle, Andrian Kuchuk, Yuriy I. Mazur, Gregory Salamo, Shui-Qing Yu

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High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam by Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo

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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy by Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo

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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire by Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo

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Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures by Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li, Shui-Qing Yu

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Study of GeSn Mid-infrared Photodetectors for High Frequency Applications by Huong Tran, Callum G. Littlejohns, David J. Thomson, Thach Pham, Amir Ghetmiri, Aboozar Mosleh, Joe Margetis, John Tolle, Goran Z. Mashanovich, Wei Du, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

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Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate by Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu

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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy by Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo

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