Simon Sze

Simon Min Sze, or Shi Min (; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Provided by Wikipedia
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  1. 1
    Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

    Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film by Chih-Chieh Hsu, Po-Tsun Liu, Kai-Jhih Gan, Dun-Bao Ruan, Simon M. Sze

    Published 2021-08-01
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  2. 2
    Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

    Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold by Yi-Chia Tsai, Blanka Magyari-Kope, Yiming Li, Seiji Samukawa, Yoshio Nishi, Simon M. Sze

    Published 2019-01-01
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  3. 3
    InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

    InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D by Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang

    Published 2018-01-01
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  4. 4
    Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

    Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors by Yung‐Fang Tan, Kai‐Chun Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Wen‐Chung Chen, Yu‐Hsuan Yeh, Chung‐Wei Wu, Chao‐Cheng Lin, Simon M. Sze

    Published 2023-04-01
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  5. 5
    Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

    Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment by Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, Yi-Ting Tseng, Ting-Chang Chang, Kuan-Chang Chang, Ming-Hui Wang, Wen-Chung Chen, Hao-Xuan Zheng, Huaqiang Wu, He Qian, Simon M. Sze

    Published 2017-10-01
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  6. 6
    A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

    A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory by Yu-Ting Su, Hsi-Wen Liu, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan, Cheng-Hsien Wu, Chih-Cheng Yang, Min-Chuan Wang, Shengdong Zhang, Hao Wang, Simon M. Sze

    Published 2018-01-01
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