Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries by Jin Park, Sang Ho Lee, So Ra Jeon, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, In Man Kang

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