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    The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

    The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source by Chen, Qimiao, Zhang, Lin, Zhou, Hao, Li, Wei, Son, Bong Kwon, Tan, Chuan Seng

    Published 2020
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    Journal Article

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