Showing 1 - 6 results of 6 for search 'Soon Fatt Yoon', query time: 0.07s Refine Results
  1. 1
    Self-Heating Effect on Modal Gain of 1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$ </tex></formula> InAs/GaAs QD Lasers With Different <formula formulatype="inline"><tex Notation="TeX">$\mmb{p}$</tex></formula> -Doping Levels

    Self-Heating Effect on Modal Gain of 1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$ </tex></formula> InAs/GaAs QD Lasers With Different <formula formulatype="i... by Rui Wang, Soon Fatt Yoon, Han Xue Zhao, Chong Yang Liu

    Published 2011-01-01
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  2. 2
    Growth of droplet-free InSbBi on GaAs substrate

    Growth of droplet-free InSbBi on GaAs substrate by Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon

    Published 2023-12-01
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  3. 3
    Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

    Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers by Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon

    Published 2021-04-01
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  4. 4
    Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

    Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer by Kwang Hong Lee, Shuyu Bao, Bing Wang, Cong Wang, Soon Fatt Yoon, Jurgen Michel, Eugene A. Fitzgerald, Chuan Seng Tan

    Published 2016-02-01
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  5. 5
    In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

    In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations by Yue Wang, Kwang Hong Lee, Wan Khai Loke, Siau Ben Chiah, Xing Zhou, Soon Fatt Yoon, Chuan Seng Tan, Eugene Fitzgerald

    Published 2018-11-01
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  6. 6
    Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

    Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer by David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald

    Published 2016-08-01
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