TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES 由 Nicholas, R, Stradling, R

ENERGY RELAXATION MECHANISMS IN N-TYPE GAAS FROM MAGNETOPHONON SPECTROSCOPY 由 Nicholas, R, Stradling, R

OBSERVATION OF CENTRAL CELL STRUCTURE IN MAGNETO-IMPURITY RESONANCES IN N-TYPE INP 由 Nicholas, R, Stradling, R

SIZE RESONANT SCATTERING FROM A HARD CYLINDRICAL POTENTIAL OBSERVED IN THE MAGNETORESISTANCE OF INSB 由 Nicholas, R, Stradling, R

STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP 由 Fung, S, Nicholas, R, Stradling, R

Growth and characterisation of semiconductors/ 由 Stradling, R. A., Klipstein, P. C.

EVIDENCE FOR A REDUCTION IN THE MOMENTUM MATRIX ELEMENT P2 DUE TO ALLOY DISORDER IN INAS1-XPX 由 Nicholas, R, Stradling, R, Ramage, J

OBSERVATION BY PHOTOCONDUCTIVITY OF STRAIN SPLITTING OF SHALLOW BULK DONORS LOCATED NEAR TO SURFACE IN SILICON MOS DEVICES 由 Nicholas, R, Klitzing, K, Stradling, R

EVIDENCE FOR ANDERSON LOCALIZATION IN LANDAU-LEVEL TAILS FROM ANALYSIS OF 2-DIMENSIONAL SHUBNIKOV-DE HAAS CONDUCTIVITY MINIMA 由 Nicholas, R, Stradling, R, Tidey, R

MAGNETOPHONON EFFECT IN INAS1-XPX 由 Nicholas, R, Stradling, R, Portal, J, Askenazy, S

CHROMIUM CONTAMINATION IN VPE INP FROM PHOTOCONDUCTIVITY SPECTRA 由 Fung, S, Nicholas, R, Davison, A, Stradling, R

SHALLOW DONOR SPECTROSCOPY IN GAXIN1-XASYP1-Y 由 Nicholas, R, Davidson, A, Sessions, S, Stradling, R

MAGNETOPHONON EFFECT IN P-TYPE PBTE AND PB0.8SN0.2TE 由 Ramage, J, Nicholas, R, Stradling, R, Kuchar, F

SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T 由 Nicholas, R, Stradling, R, Portal, J, Perrier, P, Askenazy, S

ANALYSIS OF THERMAL ACTIVATION OF 2-DIMENSIONAL SHUBNIKOV-DE HAAS CONDUCTIVITY MINIMA AND MAXIMA 由 Nicholas, R, Stradling, R, Askenazy, S, Perrier, P, Portal, J

EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON 由 Cooke, R, Nicholas, R, Stradling, R, Portal, J, Askenazy, S

OBSERVATION OF SPATIAL-DISPERSION OF SURFACE-PLASMON MODE IN HREELS OF HEAVILY DOPED N-TYPE INAS(001) 由 Egdell, R, Evans, S, Stradling, R, Li, Y, Parker, S, Williams, R

EVIDENCE FOR A CONTRIBUTION TO EXTRINSIC PHOTOCONDUCTIVE SIGNAL BY HOPPING THROUGH EXCITED-STATES OF DONORS IN SILICON AND CDTE 由 Carter, A, Carver, G, Nicholas, R, Portal, J, Stradling, R

APPLICATION OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY TO MBE GROWN GAAS(100) 由 Graygrychowski, Z, Egdell, R, Joyce, B, Stradling, R, Woodbridge, K

PROTECTIVE OVERLAYER TECHNIQUES FOR PREPARATION OF INSB(001) SURFACES 由 Evans, S, Cao, L, Egdell, R, Droopad, R, Parker, S, Stradling, R