Understanding the viability of impurity-band photovoltaics : a case study of S-doped Si by Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology

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Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting by Recht, Daniel, Sullivan, Joseph Timothy, Reedy, Robert, Buonassisi, Tonio, Aziz, Michael J.

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Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes by Sullivan, Joseph Timothy, Buonassisi, Tonio, Said, Aurore J., Recht, Daniel, Warrender, Jeffrey M., Persans, Peter D., Aziz, Michael J.

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Deactivation of metastable single-crystal silicon hyperdoped with sulfur by Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Akey, Austin J, Sullivan, Joseph Timothy, Buonassisi, Anthony, Simmons, Christie B.

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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon by Hutchinson, David, Mathews, Jay, Sullivan, Joseph T., Recht, Daniel, Williams, James S., Warrender, Jeffrey M., Persans, Peter D., Aziz, Michael J., Mailoa, Jonathan P, Akey, Austin J, Simmons, Christine B, Sullivan, Joseph Timothy, Winkler, Mark Thomas, Buonassisi, Anthony

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Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur by Winkler, Mark Thomas, Newman, Bonna Kay, Buonassisi, Tonio, Wilks, R. G., Weinhardt, L., Recht, D., Said, A. J., Zhang, Y., Blum, M., Krause, S., Yang, W. L., Heske, C., Aziz, Michael J., Bar, M., Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology

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