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    Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels

    Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels by Felix Neuper, Abhinav Chandresh, Surya Abhishek Singaraju, Jasmin Aghassi-Hagmann, Horst Hahn, Ben Breitung

    Published 2019-11-01
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