Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs by Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Beh, Syamal, Binit

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Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions by Koley, Kalyan, Syamal, Binit, Kundu, Atanu, Mohankumar, N., Sarkar, C.K.

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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing

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A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs by Dutta, Pradipta, Syamal, Binit, Koley, Kalyan, Mohankumar, N., Sarkar, C. K.

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Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs by Dutta, Pradipta, Syamal, Binit, Koley, Kalyan, Dutta, Arka, Sarkar, C. K.

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Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Zhou, Hongtao, Yuan, Li

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Compact model characteristics for generic MIS-HEMTs by Chiah, Siau Ben, Ajaykumar, Arjun, Liu, Xu, Syamal, Binit, Zhou, Hong Tao, Zhou, Xing

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