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    Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

    Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing by Tae-Hyeon Kil, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

    Published 2023-11-01
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