Taiichi Otsuji

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from Tohoku University, Sendai, Japan was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2014 ''for contributions to plasmonic semiconductor integrated device technology for terahertz sensing''. Provided by Wikipedia
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  1. 1
    Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

    Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications by Michael Shur, Gregory Aizin, Taiichi Otsuji, Victor Ryzhii

    Published 2021-11-01
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  2. 2
    A Voltage-Tuned Terahertz Absorber Based on MoS<sub>2</sub>/Graphene Nanoribbon Structure

    A Voltage-Tuned Terahertz Absorber Based on MoS<sub>2</sub>/Graphene Nanoribbon Structure by Omnia Samy, Mohamed Belmoubarik, Taiichi Otsuji, Amine El Moutaouakil

    Published 2023-05-01
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  3. 3
    Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure

    Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure by Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

    Published 2022-12-01
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  4. 4
    The gain enhancement effect of surface plasmon polaritons on terahertz stimulated emission in optically pumped monolayer graphene

    The gain enhancement effect of surface plasmon polaritons on terahertz stimulated emission in optically pumped monolayer graphene by Takayuki Watanabe, Tetsuya Fukushima, Yuhei Yabe, Stephane Albon Boubanga Tombet, Akira Satou, Alexander A Dubinov, Vladimir Ya Aleshkin, Vladimir Mitin, Victor Ryzhii, Taiichi Otsuji

    Published 2013-01-01
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