Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors by Chin, H. C., Tan, M. L. P.

High-field transport in a graphene nanolayer by Arora, V. K., Tan, M. L. P., Gupta, C.

Stability improvement of an efficient graphene nanoribbon field-effect transistor-based sram design by Mathan, N., Subbiah, J., Alias, N. E., Tan, M. L. P.

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Analytical assessment of carbon allotropes for gas sensor applications by Akbari, E., Afroozeh, A., Tan, M. L. P., Arora, V. K., Ghadiry, M.

Metal oxide-graphene field-effect transistor: interface trap density extraction model by Najam, F., Lau, K. C., Lim, C. S., Yu, Y. S., Tan, M. L. P.

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Performance analysis of an efficient montgomery multiplier using 7nm FinFET and junctionless FinFET by Mathangi, R., Alias, N. E., Hamzah, A., Tan, M. L. P., Mathan, N.

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Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors by Leong, C. H., Chuan, M. W., Wong, K. L., Najam, F., Yu, Y. S., Tan, M. L. P.

Electronic properties of zigzag silicene nanoribbons with single vacancy defect by Chuan, M. W., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., Tan, M. L. P.

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Electronic properties of silicene nanoribbons using tight-binding approach by Chuan, M. W., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., Tan, M. L. P.

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reliability analysis of gate-all-around floating gate (GAA-FG) with variable oxide thickness for flash memory cell by Hamid, F., Alias, N. E., Hamzah, A., Johari, Z., Tan, M. L. P., Ismail, R., Soin, N.

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Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Carrier statistics of highly doped armchair graphene nanoribbons with edge disorder by Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

A review of the top of the barrier nanotransistor models for semiconductor nanomaterials by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Device performance of silicene nanoribbon field-effect transistor under ballistic transport by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

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Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Electronic properties of monolayer silicon carbide nanoribbons using tight-binding approach by Chuan, M. W., Wong, Y. B., Hamzah, A., Alias, N. E., Mohamed Sultan, S., Lim, C. S., Tan, M. L. P.

Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors by Chuan, M. W., Riyadi, M. A., Hamzah, A., Alias, N. E., Sultan, S. M., Lim, C. S., Tan, M. L. P.

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Electronic properties of graphene nanoribbons with stone-wales defects using the tight-binding method by Chuan, M. W., Lok, S. Z., A. Hamzah, A. Hamzah, Alias, N. E., Mohamed Sultan, S., Lim, C. S., Tan, M. L. P

Electronic Properties of Graphene Nanoribbons With Line-Edge Roughness Doped with Nitrogen and Boron by Wong, K. L., Chuan, M. V., Hamzah, A., Rusli, S., Alias, N. E., Mohamed Sultan, S., Lim, C. S., Tan, M. L. P.